Uimhir Pháirt FF200R12KE4 Catagóirí IGBT Modules RoHS Bileog sonraí FF200R12KE4 Cur síos IGBT Modules IGBT-MODULE
Catagóirí IGBT Modules Collector- Emitter Voltage VCEO Max 1200 V Collector-Emitter Saturation Voltage 2.05 V Configuration Dual Continuous Collector Current at 25 C 240 A Gate-Emitter Leakage Current 400 nA Height 30.5 mm Length 106.4 mm Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 150 C Minimum Operating Temperature - 40 C Mounting Style Chassis Mount Package / Case 62 mm Packaging Tray Part # Aliases Pd - Power Dissipation 1100 W Product IGBT Silicon Modules Product Type IGBT Modules Technology SI Unit Weight Width 61.4 mm