Uimhir Pháirt FF150R12MS4G Catagóirí IGBT Modules RoHS Bileog sonraí FF150R12MS4G Cur síos IGBT Modules N-CH 1.2KV 225A
Catagóirí IGBT Modules Collector- Emitter Voltage VCEO Max 1200 V Collector-Emitter Saturation Voltage 3.7 V Configuration Dual Continuous Collector Current at 25 C 225 A Gate-Emitter Leakage Current 400 nA Height 17 mm Length 152 mm Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 125 C Minimum Operating Temperature - 40 C Mounting Style Chassis Mount Package / Case Econo D Packaging Tray Part # Aliases Pd - Power Dissipation 1250 W Product IGBT Silicon Modules Product Type IGBT Modules Technology SI Width 62 mm