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SQ4917EY-T1_GE3

SQ4917EY-T1_GE3
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Uimhir Pháirt
SQ4917EY-T1_GE3
Catagóirí
MOSFET
RoHS
Bileog sonraí
Cur síos
MOSFET Dual P-Channel 60V AEC-Q101 Qualified
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Sonraíochtaí

Catagóirí
MOSFET
Channel Mode
Enhancement
Configuration
Dual
Fall Time
6 ns, 6 ns
Forward Transconductance - Min
13 S, 13 S
Id - Continuous Drain Current
8 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
SO-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
5 W
Product Type
MOSFET
Qg - Gate Charge
65 nC, 65 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
40 mOhms, 40 mOhms
Rise Time
11 ns, 11 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
P-Channel
Transistor Type
2 P-Channel
Typical Turn-Off Delay Time
35 ns, 35 ns
Typical Turn-On Delay Time
11 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
60 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2.5 V

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Eochairfhocail ghaolmhara le haghaidh SQ49

  • SQ4917EY-T1_GE3 Comhtháite
  • SQ4917EY-T1_GE3 RoHS
  • SQ4917EY-T1_GE3 PDF Datasheet
  • SQ4917EY-T1_GE3 Bileog sonraí
  • SQ4917EY-T1_GE3 Cuid
  • SQ4917EY-T1_GE3 Ceannaigh
  • SQ4917EY-T1_GE3 Dáileoir
  • SQ4917EY-T1_GE3 PDF
  • SQ4917EY-T1_GE3 Comhpháirt
  • SQ4917EY-T1_GE3 ICS
  • SQ4917EY-T1_GE3 Íoslódáil PDF
  • SQ4917EY-T1_GE3 Íoslódáil datasheet
  • SQ4917EY-T1_GE3 Soláthar
  • SQ4917EY-T1_GE3 Soláthraí
  • SQ4917EY-T1_GE3 Praghas
  • SQ4917EY-T1_GE3 Bileog sonraí
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  • SQ4917EY-T1_GE3 Tairiscintí te
  • SQ4917EY-T1_GE3 Break Price
  • SQ4917EY-T1_GE3 Sonraí Teicniúla

Cuardach Coitianta

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