SI1012R-T1-GE3

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Uimhir Pháirt
SI1012R-T1-GE3
Catagóirí
MOSFET
RoHS
Bileog sonraí
Cur síos
MOSFET 20V 0.6A 175mW 700mohm @ 4.5V

Sonraíochtaí

Catagóirí
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
11 ns
Forward Transconductance - Min
1 s
Height
0.8 mm
Id - Continuous Drain Current
600 mA
Length
1.575 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SC-75A-3
Packaging
Cut Tape
Packaging
MouseReel
Packaging
Reel
Part # Aliases
Pd - Power Dissipation
175 mW
Product Type
MOSFET
Qg - Gate Charge
750 pC
Rds On - Drain-Source Resistance
700 mOhms
Rise Time
5 ns
Series
SI1
Technology
SI
Tradename
TrenchFET
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
25 ns
Typical Turn-On Delay Time
5 ns
Vgs - Gate-Source Voltage
4.5 V
Vgs th - Gate-Source Threshold Voltage
450 mV
Width
0.76 mm

Léirmheasanna is Déanaí

Received, Fast shipping, not checked yet

Everything as it is written in the description of the same deductible prodovtsu deserved 5

Takes 8 days to Japan. Good!

Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.

Goods came in two weeks. Well packed. Track number tracked

Eochairfhocail ghaolmhara le haghaidh SI10

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  • SI1012R-T1-GE3 PDF Datasheet
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