VN0106N3-G

Tá Íomhánna le haghaidh tagartha amháin
Uimhir Pháirt
VN0106N3-G
Catagóirí
MOSFET
RoHS
Bileog sonraí
Cur síos
MOSFET 60V 3Ohm

Sonraíochtaí

Catagóirí
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
5 ns
Forward Transconductance - Min
300 ms
Height
5.33 mm
Id - Continuous Drain Current
350 mA
Length
5.21 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-92-3
Packaging
Bulk
Pd - Power Dissipation
1 W
Product Type
MOSFET
Rds On - Drain-Source Resistance
3 Ohms
Rise Time
5 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Type
FET
Typical Turn-Off Delay Time
6 ns
Typical Turn-On Delay Time
3 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
60 V
Vgs - Gate-Source Voltage
10 V
Vgs th - Gate-Source Threshold Voltage
800 mV
Width
4.19 mm

Léirmheasanna is Déanaí

Teşekkürler

Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow

Good material. Great seller, efficient and insurance. Ok

Packed medium, in transit could поврелиться. But since it's safe, work perfectly

Excellent transaction five star service thank you, we will do business again.

Eochairfhocail ghaolmhara le haghaidh VN01

  • VN0106N3-G Comhtháite
  • VN0106N3-G RoHS
  • VN0106N3-G PDF Datasheet
  • VN0106N3-G Bileog sonraí
  • VN0106N3-G Cuid
  • VN0106N3-G Ceannaigh
  • VN0106N3-G Dáileoir
  • VN0106N3-G PDF
  • VN0106N3-G Comhpháirt
  • VN0106N3-G ICS
  • VN0106N3-G Íoslódáil PDF
  • VN0106N3-G Íoslódáil datasheet
  • VN0106N3-G Soláthar
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